High quality epitaxial Fe films were grown on GaAs(001) by molecular beam e
pitaxy and magnetron sputtering. Two-dimensional arrays of circular dots wi
th 200 nm diameter and 500 nm period were made by interferometric lithograp
hy and ion beam etching. Large area patterning (about 1 cm(2)) allows integ
ral magnetic measurements with an alternating gradient magnetometer. The ma
gnetic behavior of thick patterned films is dominated by the demagnetizing
field. Ultrathin continuous films and dot arrays of these show a strong uni
axial in-plane magnetic anisotropy with the easy axis in [110] direction wh
ich is fully conserved during the patterning process. This means that two s
table remanent single domain states exist in ultrathin Fe(001) sub-mu m dot
s on GaAs(001) because (i) the magnetostatic energy is not important due to
the small aspect ratio, and (ii) the Fe/GaAs(001) interface creates a stro
ng uniaxial in-plane magnetic anisotropy. Nanomagnets with these properties
seem very attractive for high density memory elements. (C) 2000 American I
nstitute of Physics. [S0021- 8979(00)47508-0].