Devices have been patterned from enhanced sandwich material as well as more
conventional giant magnetoresistance (GMR) sandwich material. The enhanced
GMR sandwich consists of essentially adding a Cu spacer and a synthetic an
tiferromagnet layer to either side of a conventional sandwich stack. While
devices patterned from simple sandwich material are always high resistance
in the zero field bias state and decrease in resistance in an applied field
, similar devices fabricated from enhanced sandwich material exhibit more c
omplex characteristics. Depending upon the bias current density, the zero f
ield biased state may be either low or high resistance for this structure.
This effect could be useful for applications such as current or magnetic fi
eld sensing. (C) 2000 American Institute of Physics. [S0021-8979(00)95008-4
].