Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

Citation
Cl. Chien et al., Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited), J APPL PHYS, 87(9), 2000, pp. 4659-4664
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
2
Pages
4659 - 4664
Database
ISI
SICI code
0021-8979(20000501)87:9<4659:VLMIES>2.0.ZU;2-G
Abstract
Single-crystal bismuth thin films, fabricated by electrodeposition and suit able annealing, exhibit very large magnetoresistance of 400 000% at 5 K and 300% at 300 K, as well as pronounced Shubnikov-de Haas oscillations. A hyb rid structure demonstrates the potential for field sensing with sensitiviti es of 35%/Oe at 5 K and 0.2%/Oe at 300 K. (C) 2000 American Institute of Ph ysics. [S0021- 8979(00)25508-4].