Single-crystal bismuth thin films, fabricated by electrodeposition and suit
able annealing, exhibit very large magnetoresistance of 400 000% at 5 K and
300% at 300 K, as well as pronounced Shubnikov-de Haas oscillations. A hyb
rid structure demonstrates the potential for field sensing with sensitiviti
es of 35%/Oe at 5 K and 0.2%/Oe at 300 K. (C) 2000 American Institute of Ph
ysics. [S0021- 8979(00)25508-4].