Tunnel magnetoresistance versus micromagnetism in magnetic tunnel junctions

Authors
Tiusan, C Dimopoulos, T Ounadjela, K Hehn, M van den Berg, HAM da Costa, V Henry, Y
Citation
C. Tiusan et al., Tunnel magnetoresistance versus micromagnetism in magnetic tunnel junctions, J APPL PHYS, 87(9), 2000, pp. 4676-4678
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
2
Pages
4676 - 4678
Database
ISI
SICI code
0021-8979(20000501)87:9<4676:TMVMIM>2.0.ZU;2-5
Abstract
The impact of the micromagnetic configuration within the ferromagnetic laye rs on transport properties of hard/soft magnetic tunnel junctions is presen ted. An artificial ferrimagnetic (AFi) trilayer structure is used as a magn etically hard subsystem. Fluctuations in magnetization in the AFi affect th e resistance of the tunnel junctions and are fully reflected in the shape a nd amplitude of the tunnel magnetoresistance signal. (C) 2000 American Inst itute of Physics. [S0021-8979(00)52908-9].