We have sputter deposited NiO-Co bilayers on MgO (001) substrates. NiO grow
s epitaxially on MgO at 800 degrees C and subsequently room temperature dep
osited Co films have a fcc crystal structure in epitaxy with the oxide unde
rlayer. Bias fields higher than 700 Oe at 5 K were reported. Polar Kerr eff
ect measurements evidence saturation fields for perpendicular magnetization
up to 15 T at low temperature, proof for a strong NiO-Co exchange interact
ion. The formation of a domain wall in the Co layer is a possible mechanism
for such large saturation fields. (C) 2000 American Institute of Physics.
[S0021-8979(00)36108-4].