Exchange anisotropy in epitaxial NiO(001)-fcc Co bilayers

Citation
S. Dubourg et al., Exchange anisotropy in epitaxial NiO(001)-fcc Co bilayers, J APPL PHYS, 87(9), 2000, pp. 4936-4938
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
2
Pages
4936 - 4938
Database
ISI
SICI code
0021-8979(20000501)87:9<4936:EAIENC>2.0.ZU;2-G
Abstract
We have sputter deposited NiO-Co bilayers on MgO (001) substrates. NiO grow s epitaxially on MgO at 800 degrees C and subsequently room temperature dep osited Co films have a fcc crystal structure in epitaxy with the oxide unde rlayer. Bias fields higher than 700 Oe at 5 K were reported. Polar Kerr eff ect measurements evidence saturation fields for perpendicular magnetization up to 15 T at low temperature, proof for a strong NiO-Co exchange interact ion. The formation of a domain wall in the Co layer is a possible mechanism for such large saturation fields. (C) 2000 American Institute of Physics. [S0021-8979(00)36108-4].