Hall effect of epitaxial double-perovskite Sr2FeMoO6 thin films

We prepared high epitaxial thin films of the compound Sr2FeMoO6 with narrow rocking curves by pulsed laser deposition. The diagonal and nondiagonal el ements of the resistivity tensor were investigated at temperatures from 4 K up to room temperature in magnetic fields up to 8 T. An electronlike ordin ary Hall effect and a holelike anomalous Hall contribution are observed. Bo th coefficients have reversed sign compared to the colossal magnetoresistiv e manganites. We found at 300 K an ordinary Hall coefficent of -1.87x10(-10 ) m(3)/A s, corresponding to a nominal charge carrier density of four elect rons per formula unit. At low temperature only a small negative magnetoresi stance is observed which vanishes at higher temperatures. The temperature c oefficient of the resistivity is negative over the whole temperature range. A Kondo like behavior is observed below 30 K while above 100 K variable ra nge hopping like transport occurs. (C) 2000 American Institute of Physics. [S0021-8979(00)26708-X].