Evaluation of vacuum bonded GaAs/Si spin-valve transistors

In this article a new type of spin-valve transistor, a hybrid GaAs/Si devic e, is presented. In this device the Si emitter is replaced by a GaAs emitte r launcher structure. The integration of the GaAs with the Si was done by m eans of a room temperature vacuum bonding technique. By using a soft NiFe/A u/Co spin-valve structure as metal base, a 63% change in collector current is obtained at room temperature for a saturation field of 30 Oe. The corres ponding in-plane magnetoresistance is only 1%. (C) 2000 American Institute of Physics. [S0021-8979(00)71408-3].