Voltage dependence of the magnetic state in magnetic tunnel junctions

Authors
Heide, C Krikunov, AI Ogrin, YF Zilberman, PE Elliott, RJ
Citation
C. Heide et al., Voltage dependence of the magnetic state in magnetic tunnel junctions, J APPL PHYS, 87(9), 2000, pp. 5221-5223
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
2
Pages
5221 - 5223
Database
ISI
SICI code
0021-8979(20000501)87:9<5221:VDOTMS>2.0.ZU;2-F
Abstract
In magnetic tunnel junctions (MTJ) we study how the magnetic state depends on the tunnel current. We present data on the I-V dependence of the MTJ in strong biasing fields up to 4 V, and propose that the observed hysteresis m ay have its origin in spin-polarized electrons influencing locally the magn etic state of the system. (C) 2000 American Institute of Physics. [S0021-89 79(00)32608-1].