Magnetic and magneto-transport properties of gamma Fe2O3-grain-embedded Fe3O4 thin films

Authors
Uotani, M Taniyama, T Yamazaki, Y
Citation
M. Uotani et al., Magnetic and magneto-transport properties of gamma Fe2O3-grain-embedded Fe3O4 thin films, J APPL PHYS, 87(9), 2000, pp. 5585-5587
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
2
Pages
5585 - 5587
Database
ISI
SICI code
0021-8979(20000501)87:9<5585:MAMPOG>2.0.ZU;2-J
Abstract
Magnetic and magneto-transport properties of gamma Fe2O3-grain-embedded Fe3 O4 thin films are investigated. The magnetoresistance (MR) abruptly changes in the intermediate oxidation state between Fe3O4 and gamma Fe2O3. The mag netic relaxation coefficient also becomes a minimum around this oxidation s tate. The slow dynamics of the magnetic relaxation are associated with the disturbance of the domain wall displacement due to the embedded gamma Fe2O3 grains with Fe2+ impurities. A possible mechanism for the change in the MR is also proposed. (C) 2000 American Institute of Physics. [S0021-8979(00)3 3708-2].