Coercive and anisotropy fields in patterned amorphous FeSi submicrometric structures

Citation
M. Velez et al., Coercive and anisotropy fields in patterned amorphous FeSi submicrometric structures, J APPL PHYS, 87(9), 2000, pp. 5654-5656
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
2
Pages
5654 - 5656
Database
ISI
SICI code
0021-8979(20000501)87:9<5654:CAAFIP>2.0.ZU;2-M
Abstract
Amorphous FexSi1-x films have been prepared on Si substrates in order to fa bricate submicrometric magnetic structures with soft magnetic behavior. The magnetic properties compositional dependence of the unpatterned samples ha s been analyzed to select the Fe content (x = 0.7) with the lowest coercive and anisotropy fields values. Arrays of Fe0.7Si0.3 lines have been fabrica ted by electron beam lithography combined with a liftoff technique, with ty pical dimensions of 200 nm linewidth and 1 mu m line spacing. These arrays present coercive fields parallel to the line direction as small as 9 Oe. (C ) 2000 American Institute of Physics. [S0021-8979(00)38808-9].