Metal ion implantation using a filtered cathodic vacuum arc

Citation
Mmm. Bilek et al., Metal ion implantation using a filtered cathodic vacuum arc, J APPL PHYS, 87(9), 2000, pp. 4198-4204
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
1
Pages
4198 - 4204
Database
ISI
SICI code
0021-8979(20000501)87:9<4198:MIIUAF>2.0.ZU;2-2
Abstract
When plasma immersion ion implantation is performed in the condensable plas ma stream produced by a cathodic vacuum arc, deposition as well as implanta tion usually occurs. In this article we describe a method of achieving pure implantation by orienting the substrate so that it is shadowed from the pl asma beam. Implantation depth profiles measured in glassy carbon and CR39 p olymer using Rutherford backscattering are compared to illustrate the effec tiveness of the technique for conducting and insulating substrates. Chargin g of the insulating substrate was found to cause a reduction in implantatio n depth compared to a conducting substrate. The depth profiles in glassy ca rbon were comparable to those achieved by conventional extracted ion beam i mplantation. Implantation of magnesium into hydroxyapatite and alumina was carried out to improve the bone cell adhesion onto these materials for pros thetic applications. (C) 2000 American Institute of Physics. [S0021-8979(00 )05004-0].