M. Nikl et al., Influence of doping on the emission and scintillation characteristics of PbWO4 single crystals, J APPL PHYS, 87(9), 2000, pp. 4243-4248
X-ray excited luminescence spectra, wavelength-resolved thermoluminescence
glow curves, ultraviolet and Na-22 excited emission decays, and Co-60 excit
ed light yield were measured on a set of high purity (99.9999%) PbWO4:X (X=
Lu3+, Y3+, Gd3+, Sc3+, Nb5+, Pb2+) samples grown in an equivalent way. Posi
tive influence of trivalent doping (Lu, Gd, Y) was noted, which consists in
suppressing the deeper trapping states in the PbWO4 structure. Such states
are related to the radiative recombination processes in the green and red
part of the spectra. The presence of the green emission centers also result
s in the increase of the slow recombination decay components in the microse
cond time scale. High concentration of the dopant ions (670 atomic ppm for
PbWO4:Nb) results in the creation of new nonradiative recombination sites,
which suppress the recombination decay components and the light yield as we
ll. (C) 2000 American Institute of Physics. [S0021- 8979(00)01809-0].