Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy

Citation
U. Behn et al., Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy, J APPL PHYS, 87(9), 2000, pp. 4315-4318
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
1
Pages
4315 - 4318
Database
ISI
SICI code
0021-8979(20000501)87:9<4315:UBOTSF>2.0.ZU;2-J
Abstract
The photoreflectance signal from GaN films is sensitive to the ambient medi um. A large decrease in the photoreflectance amplitude is observed, when th e ambient medium is changed from air to vacuum. This effect is attributed t o ultraviolet-light-induced desorption of oxygen from the sample surface le ading to a reduction of the surface barrier height. The effect is absent, w hen a thin Ti layer is deposited on top of the GaN film. A simple model is used to demonstrate that the surface photovoltage can be strongly reduced w ith a decrease of the surface barrier height. (C) 2000 American Institute o f Physics. [S0021-8979(00)05009-X].