Controlled n-type doping of a molecular organic semiconductor: Naphthalenetetracarboxylic dianhydride (NTCDA) doped with bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)

Citation
A. Nollau et al., Controlled n-type doping of a molecular organic semiconductor: Naphthalenetetracarboxylic dianhydride (NTCDA) doped with bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF), J APPL PHYS, 87(9), 2000, pp. 4340-4343
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
1
Pages
4340 - 4343
Database
ISI
SICI code
0021-8979(20000501)87:9<4340:CNDOAM>2.0.ZU;2-K
Abstract
We present a study of controlled n-type doping in molecular organic semicon ductors: Naphthalenetetracarboxylic dianhydride is doped by cosublimation w ith the donor molecule bis(ethylenedithio)-tetrathiafulvalene. Electrical p arameters are deduced from temperature-dependent measurements of the conduc tivity and the thermopower for various dopant concentrations. The results a re compared to the predictions of a standard model commonly used for crysta lline semiconductors. The Fermi level shifts towards the transport level, t he conductivity is increased, and the mobility decreases with the doping ra tio. (C) 2000 American Institute of Physics. [S0021-8979(00)00607-1].