Controlled n-type doping of a molecular organic semiconductor: Naphthalenetetracarboxylic dianhydride (NTCDA) doped with bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)
A. Nollau et al., Controlled n-type doping of a molecular organic semiconductor: Naphthalenetetracarboxylic dianhydride (NTCDA) doped with bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF), J APPL PHYS, 87(9), 2000, pp. 4340-4343
We present a study of controlled n-type doping in molecular organic semicon
ductors: Naphthalenetetracarboxylic dianhydride is doped by cosublimation w
ith the donor molecule bis(ethylenedithio)-tetrathiafulvalene. Electrical p
arameters are deduced from temperature-dependent measurements of the conduc
tivity and the thermopower for various dopant concentrations. The results a
re compared to the predictions of a standard model commonly used for crysta
lline semiconductors. The Fermi level shifts towards the transport level, t
he conductivity is increased, and the mobility decreases with the doping ra
tio. (C) 2000 American Institute of Physics. [S0021-8979(00)00607-1].