InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN

The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a curr ent spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electric al properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt t hin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and 9.12x10(-3) Omega cm(2), demonstrating that a Pt thin film can be us ed as an effective current spreading layer with high light transparency. (C ) 2000 American Institute of Physics. [S0021-8979(00)05107-0].