Stress-induced leakage current generation kinetics based on anode hole injection and hole dispersive transport

An approach giving a physical understanding of the stress-induced leakage c urrent (SILC) generation kinetics based on anode hole injection and hole di spersive transport in the oxide is presented. It is shown that the SILC is not directly correlated to the defects responsible for oxide breakdown. How ever, it is suggested that trapped holes can impact on the defect creation rate and, in turn, on the breakdown generation. (C) 2000 American Institute of Physics. [S0021-8979(00)02909-1].