Kinetic modeling of film growth rates of TiN films in atomic layer deposition

A kinetic model has been studied for exploring the prospects of atomic laye r deposition (ALD) of TiN thin films. In the present article, assuming the existence for readsorption of each reactant, we can explain and model the f ilm growth of 0-2 at. ML in one deposition cycle in TiN-ALD. Applying the p roposed model to TiN films grown by ALD using tetrakis(dimethylamido)titani um and ammonia, the parameters related to both the adsorption rate and the adsorption order of each reactant were extracted. With the extracted parame ters, TiN film thickness in one deposition cycle depending on the pulse tim e of each reactant could be predicted in a reasonable range of accuracy. (C ) 2000 American Institute of Physics. [S0021-8979(00)07609-X].