Jy. Shim et al., Mechanism of field emission from chemical vapor deposited undoped polycrystalline diamond films, J APPL PHYS, 87(10), 2000, pp. 7508-7518
Field emission characteristics of undoped polycrystalline diamond films wit
h different structural properties have been investigated. By introducing po
sitive bias voltage and/or increasing CH4/H-2 ratio, the film quality is si
gnificantly deteriorated together with the increase of nondiamond carbon co
mponent and the surface morphologies of the films lost their unique facet s
hape. The reason for the increase of nondiamond carbon content is described
in terms of both the increase of substrate temperature and the excessive g
eneration of CHn radicals. It is confirmed that an increase in the nondiamo
nd carbon content markedly enhances field emission properties of diamond fi
lms. From the spatial distribution of emission sites, it is suggested that
the transport path of field-emitted electrons depends on the nondiamond car
bon content: for the film with a large amount of nondiamond carbon, electro
ns transport preferentially through the conducting mediums such as grain bo
undaries while for the film with a relatively small amount of nondiamond ca
rbon, electron transport occurs mainly through the diamond surface. (C) 200
0 American Institute of Physics. [S0021-8979(00)05510-9].