W. Li et al., Study of concentration-dependent Be diffusion in GaInP layers grown by gassource molecular beam epitaxy, J APPL PHYS, 87(10), 2000, pp. 7592-7593
Concentration-dependent Be diffusion in GaInP layers grown by gas source mo
lecular beam epitaxy has been studied using secondary ion mass spectrometry
. At a growth temperature of 500 degrees C, apparent Be diffusion occurs at
a doping level over 4 x 10(19) cm(-3). At lower temperature, the Be profil
e exhibits a significantly reduced diffusion. In contrast to Zn diffusion i
n metalorganic vapor phase epitaxy, no enhancement of Be redistribution in
GaInP by adjacent n-type layers occurs. These results are explained based o
n the interstitial-substitutional diffusion model. A p(+)-n(+) GaInP tunnel
diode with a high reverse-biased conductance of 15 mA/cm2 at 1.7 mV has be
en achieved. (C) 2000 American Institute of Physics. [S0021-8979(00)05110-0
].