Study of concentration-dependent Be diffusion in GaInP layers grown by gassource molecular beam epitaxy

Citation
W. Li et al., Study of concentration-dependent Be diffusion in GaInP layers grown by gassource molecular beam epitaxy, J APPL PHYS, 87(10), 2000, pp. 7592-7593
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
10
Year of publication
2000
Pages
7592 - 7593
Database
ISI
SICI code
0021-8979(20000515)87:10<7592:SOCBDI>2.0.ZU;2-X
Abstract
Concentration-dependent Be diffusion in GaInP layers grown by gas source mo lecular beam epitaxy has been studied using secondary ion mass spectrometry . At a growth temperature of 500 degrees C, apparent Be diffusion occurs at a doping level over 4 x 10(19) cm(-3). At lower temperature, the Be profil e exhibits a significantly reduced diffusion. In contrast to Zn diffusion i n metalorganic vapor phase epitaxy, no enhancement of Be redistribution in GaInP by adjacent n-type layers occurs. These results are explained based o n the interstitial-substitutional diffusion model. A p(+)-n(+) GaInP tunnel diode with a high reverse-biased conductance of 15 mA/cm2 at 1.7 mV has be en achieved. (C) 2000 American Institute of Physics. [S0021-8979(00)05110-0 ].