Gas phase study of silicon-C-60 complexes: Surface coating and polymerization

Citation
M. Pellarin et al., Gas phase study of silicon-C-60 complexes: Surface coating and polymerization, J CHEM PHYS, 112(19), 2000, pp. 8436-8445
Citations number
56
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CHEMICAL PHYSICS
ISSN journal
00219606 → ACNP
Volume
112
Issue
19
Year of publication
2000
Pages
8436 - 8445
Database
ISI
SICI code
0021-9606(20000515)112:19<8436:GPSOSC>2.0.ZU;2-W
Abstract
(C-60)(n)Si-m(+) cationic clusters are produced in a laser vaporization sou rce by quenching the vapors from two independent C-60 and silicon targets. They are analyzed in the gas phase by abundance and photofragmentation time -of-flight mass spectroscopy. For complexes containing only one C-60 molecu le, silicon is unlikely to wet the fullerene surface. Mass spectroscopic st udies are rather in favor of a three-dimensional growth of silicon clusters weakly bound to C-60. For larger systems, one can distinguish two classes of silicon atoms: most of them group in the form of compact islands (or clu sters) and some others are directly involved in the linkage of C-60 molecul es. Particular geometric structures for the stable polymers (C60Si)(n-2)(C- 60)(2)(+), (C60Si)(n-1)C-60(+), and (C60Si)(n)(+) are postulated. (C) 2000 American Institute of Physics. [S0021-9606(00)00418-9].