(111)B growth elimination in GaAs MBE of (001)-(111)B mesa structure by suppressing 2D-nucleation

MBE growth of GaAs mesa structure consisting of (0 0 1) top and (1 1 1)B si de surfaces was studied and the ratio of growth rate on (1 1 1)B facet to t hat on (0 0 1) was measured in various growth conditions. The value changed drastically, from 0 to 0.8, depending on the growth conditions. It was fou nd that complete growth elimination occurred on (1 1 1)B facet by decreasin g incident Ga flux and suppressing 2D-nucleation. We obtained various infor mation from these experiments about elementary process of GaAs MBE, includi ng critical Ga adatom concentration for 2D-nucleation on (1 1 1)B surface a nd (1 1 1)B-(0 0 1) inter-surface diffusion. (C) 2000 Elsevier Science B.V. All rights reserved.