Authors
Citation
S. Iida et al., Role of lateral growth fronts in the formation of InxGa1-xAs bridge layer on trench substrates, J CRYST GR, 212(3-4), 2000, pp. 597-600
Citations number
5
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
212
Issue
3-4
Year of publication
2000
Pages
597 - 600
Database
ISI
SICI code
0022-0248(200005)212:3-4<597:ROLGFI>2.0.ZU;2-N
Abstract
The role of the lateral growth fronts in the formation of InGaAs bridge lay
er on trench substrates was investigated. For the edge angles of growth fro
nts less than or equal to 90 degrees, the bridge layers were formed on the
basis of "Berg effect". The bridge formation of {1 1 1}A growth front was g
reatly influenced by its neighboring {1 1 1}B growth front. (C) 2000 Elsevi
er Science B.V. All rights reserved.