Comparison of characterization techniques in p-on-n HgCdTe LWIR photodiodes technology

Authors
Wenus, J Madejczyk, P Rutkowski, J
Citation
J. Wenus et al., Comparison of characterization techniques in p-on-n HgCdTe LWIR photodiodes technology, J INF M W, 19(2), 2000, pp. 81-87
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN journal
10019014 → ACNP
Volume
19
Issue
2
Year of publication
2000
Pages
81 - 87
Database
ISI
SICI code
1001-9014(200004)19:2<81:COCTIP>2.0.ZU;2-P
Abstract
In this paper standard techniques for characterization of HgCdTe liquid pha se epitaxial layers (LPE) were presented. The performance of long wavelengt h p-on-n HgCdTe photodiodes fabricated by arsenic diffusion was described. The correlation between LPE HgCdTe material parameters and properties of th e infrared photodiodes was demonstrated.