INGAP INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY USING GAP AS PHOSPHORUS SOURCE/

InGaP/InGaAs/GaAs pseudomorphic high electron mobility transistor (HEM T) structures were grown on 3-inch GaAs (100) substrates by solid sour ce molecular beam epitaxy using polycrystalline GaP as a phosphorous s ource. The inclusion oi a 5 nm thick AlGaAs layer between the InGaP an d InGaAs yielded the best electrical characteristics, where the room t emperature mobility and sheet carrier concentration were 5200cm(2)/V.s and 1.8 x 10(12) cm(-2), respectively. A 5 x 100 mu m(2) HEMT device fabricated using this structure yielded an extrinsic transconductance of 80 mS/mm.