COBALT THIN-FILMS PREPARED BY CHEMICAL-VAPOR-DEPOSITION FROM COBALT ACETYLACETONATES

Cobalt thin films were prepared by low-temperature atmospheric-pressur e chemical vapor deposition from cobalt(II) acetylacetonate and cobalt (III) acetylacetonate. The resistivity was low (10-30 mu Omega.cm) and independent of film thickness, when the film thickness ranged from 15 0 to 700 nm, The thin films deposited from cobalt(III) acetylacetonate consisted of particles of uniform diameter, and consequently an islan d structure of high resistivity was formed on the substrate when the f ilm thickness mas less than 150 nm. A similar island structure of high resistivity but one order of magnitude larger than that for the thin films was formed for the thick films deposited from cobalt(II) acetyla cetonate.