ESTIMATION OF SPATIAL EXTENT OF A DEFEAT CLUSTER IN SI INDUCED BY SINGLE-ION IRRADIATION

In order to estimate the spatial extent of a defect cluster in Si indu ced by single Ar ion irradiation, we analyzed the dependence of the se ries resistance of ion-irradiated Schottky diodes on the total ion dos e. Ar ions were implanted into Si at 75 keV at doses ranging from 10(1 0) ions/cm(2) to 10(15) ions/cm(2) at room temperature; The series res istance increased abruptly between 10(12) ions/cm(2) and 10(13) ions/c m(2) by two orders of magnitude. The diameter of high-resistivity regi ons in Si induced by a single ion impact was 21 nm under our experimen tal conditions. We conclude that heavily damaged regions around amorph ous cores are responsible bf the high-resistivity regions.