Citation
F. Chavez et al., Hot-filament-enhanced chemical vapor deposition of silicon oxide films, MATER LETT, 43(5-6), 2000, pp. 324-328
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X
→ ACNP
Volume
43
Issue
5-6
Year of publication
2000
Pages
324 - 328
Database
ISI
SICI code
0167-577X(200005)43:5-6<324:HCVDOS>2.0.ZU;2-8
Abstract
Silicon oxide films were deposited on crystalline gallium arsenide substrat
es by chemical vapor deposition (CVD) using a solid source of silicon dioxi
de and atomic hydrogen as reactant, Infrared (LR) absorption spectra of the
samples showed the characteristic bands of Si-O-Si group, typical of SiO2,
and SiH group, but could not detect any band corresponding to OH or SIGH g
roups. (C) 2000 Elsevier Science B.V. All rights reserved.