High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 mu m

Authors
Lane, B Tong, S Diaz, J Wu, Z Razeghi, M
Citation
B. Lane et al., High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 mu m, MAT SCI E B, 74(1-3), 2000, pp. 52-55
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
74
Issue
1-3
Year of publication
2000
Pages
52 - 55
Database
ISI
SICI code
0921-5107(20000501)74:1-3<52:HPIEIL>2.0.ZU;2-M
Abstract
Broad-areal electrical injection, interband mid-infrared lasers emitting be tween 3.2 and 4.7 mu m have been grown by low-pressure metal organic chemic al vapor deposition. A InAsSbP based double heterostructure laser emitting at 3.2 mu m is reported to produce 450 mW in continuous mode operation. Fur thermore, the InAsSb and InAsP alloys have been used for the growth of stra ined-layer superlattice lasers emitting above 4.0 mu m. These lasers demons trate threshold current densities as low as 100 A cm(-1) and output powers up to 546 mW. (C) 2000 Elsevier Science S.A. All rights reserved.