GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors

Authors
Perera, AGU Shen, WZ Liu, HC Buchanan, M Schaff, WJ
Citation
Agu. Perera et al., GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors, MAT SCI E B, 74(1-3), 2000, pp. 56-60
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
74
Issue
1-3
Year of publication
2000
Pages
56 - 60
Database
ISI
SICI code
0921-5107(20000501)74:1-3<56:GHIWIP>2.0.ZU;2-E
Abstract
The recent development of p-GaAs homojunction interfacial workfunction inte rnal photoemission (HIWIP) far-infrared (> 40 mu m) detectors is briefly re viewed. The emphasis is on the detector performance, which includes respons ivity, quantum efficiency, bias effects, cut-off wavelength, uniformity, no ise, and negative capacitance characteristics. Promising results indicate t hat p-GaAs HIWIP detectors have great potential to become a strong competit or in far-infrared applications. (C) 2000 Elsevier Science S.A. All rights reserved.