The recent development of p-GaAs homojunction interfacial workfunction inte
rnal photoemission (HIWIP) far-infrared (> 40 mu m) detectors is briefly re
viewed. The emphasis is on the detector performance, which includes respons
ivity, quantum efficiency, bias effects, cut-off wavelength, uniformity, no
ise, and negative capacitance characteristics. Promising results indicate t
hat p-GaAs HIWIP detectors have great potential to become a strong competit
or in far-infrared applications. (C) 2000 Elsevier Science S.A. All rights
reserved.