Citation
A. Serpenguzel et al., Coupled cavity DQW semiconductor lasers, MAT SCI E B, 74(1-3), 2000, pp. 80-83
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
74
Issue
1-3
Year of publication
2000
Pages
80 - 83
Database
ISI
SICI code
0921-5107(20000501)74:1-3<80:CCDSL>2.0.ZU;2-Z
Abstract
Coupled cavity effects has been observed in the electroluminescence spectra
of monolithic GaAs/GaAlAs double quantum well graded index separate confin
ement heterostructure semiconductor diode lasers. A time domain analysis ha
s been performed in order to simulate the experimentally observed results.
The theoretically calculated spectra are in good agreement with the experim
entally observed spectra. (C) 2000 Elsevier Science S.B. All rights reserve
d.