3D island nucleation behaviour on high index substrates

We present experimental data on InAs epitaxial layers grown on (N11)GaAs su bstrates showing that the substrate orientation affects the critical thickn ess for the onset of quantum dot self-assembling. The samples under investi gation were characterised via photoluminescence measurements. We observed a decrease of self-assembling critical coverage with increasing Miller index N of the substrate. The observed behaviour is induced in-island strain rel axation inhibition caused by the use of high index substrates for the growt h. (C) 2000 Elsevier Science S.A. All rights reserved.