Optical characterisation of self organized InAs/GaAs quantum dots grown byMBE

Authors
Hjiri, M Hassen, F Maaref, H
Citation
M. Hjiri et al., Optical characterisation of self organized InAs/GaAs quantum dots grown byMBE, MAT SCI E B, 74(1-3), 2000, pp. 253-258
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
74
Issue
1-3
Year of publication
2000
Pages
253 - 258
Database
ISI
SICI code
0921-5107(20000501)74:1-3<253:OCOSOI>2.0.ZU;2-V
Abstract
In this report we have investigated the optical characterisation of 2ML InA s/GaAs sheet grown by molecular beam epitaxy on (001) substrates. In partic ular we have studied the excitation energy dependence of PL spectra. The re sults allow us to resolve the emission from quantum dots (QDs) and that fro m the copper (Cu) centre in the GaAs substrate. A fast red shift of PL ener gy and an anomalous behaviour of linewidth with increasing temperature were observed and attributed to the tunnelling process between nearby QDs and e lectron-phonon scattering process. (C) 2000 Elsevier Science S.A. All right s reserved.