Dynamic latch-up in advanced LIGBT structures at high operating temperatures

The dynamic latch-up process in conventional and modified lateral insulated gale bipolar transistor (LIGBT) structures is studied in this paper. In a previous study, we have argued that the modified structure shows a superior static latch-up performance at high operating temperatures. The dynamic la tch-up has also been measured under resistive load at different operating t emperatures. The dependence of the dynamic latch-up current with the gate r esistance has also been taken into account. A figure of merit of the dynami c latch-up current normalized to the static latch-up current level as a fun ction of operating temperature shows the excellent electrical behaviour of the proposed modified LIGBT structure at high temperatures when compared wi th its convectional counterpart. (C) 2000 Elsevier Science S.A. All rights reserved.