HIGHLY EFFICIENT DIODE-PUMPED 3-MU-M ER3+BAY2F8 LASER

Citation
Hj. Eichler et al., HIGHLY EFFICIENT DIODE-PUMPED 3-MU-M ER3+BAY2F8 LASER, IEEE journal of selected topics in quantum electronics, 3(1), 1997, pp. 90-94
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
ISSN journal
1077260X
Volume
3
Issue
1
Year of publication
1997
Pages
90 - 94
Database
ISI
SICI code
1077-260X(1997)3:1<90:HED3EL>2.0.ZU;2-S
Abstract
A systematic investigation on a series of monoclinic Er3+:BaY2F8 cryst als with different dopant concentrations (C-Er = 5%-30%) and crystal o rientations was conducted to optimize the laser performance in this ne w 3-mu m laser medium by laser diode pumping, The highest slope effici ency of 32% near the quantum defect (35%) was obtained with a 10% dope d Er3+:BaY2F8 crystal with the orientation (010) and a length of 3.5 m m, A maximum output power of 160 mW was achieved at an absorbed pump p ower of 550 mW at a wavelength of 970 nm.