LOW-HEAT HIGH-POWER SCALING USING INGAAS-DIODE-PUMPED YB-YAG LASERS

Authors
BRUESSELBACH HW SUMIDA DS REEDER RA BYREN RW
Citation
Hw. Bruesselbach et al., LOW-HEAT HIGH-POWER SCALING USING INGAAS-DIODE-PUMPED YB-YAG LASERS, IEEE journal of selected topics in quantum electronics, 3(1), 1997, pp. 105-116
Citations number
46
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
Journal title
IEEE journal of selected topics in quantum electronics → ACNP
ISSN journal
1077260X
Volume
3
Issue
1
Year of publication
1997
Pages
105 - 116
Database
ISI
SICI code
1077-260X(1997)3:1<105:LHSUIY>2.0.ZU;2-W
Abstract
We report to our knowledge the highest to date quasi-CW output power, 600 W and pulse energy, >1 J, for an InGaAs diode-pumped Yb:YAG laser. In separate preliminary results, we have also obtained 225 W of avera ge output power under true CW diode pumping. This performance was obta ined using a laser head designed to be part of a master oscillator pow er amplifier (MOPA) operating at 3 kW. We summarize why the diode-pump ed Yb:YAG crystal laser is ideal for scaling to high average powers an d the different approaches being pursued. We also report our latest re sults for side-pumped rod devices.