Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 2

The successful application of strained-layers based heterostructures for el ectronic and optoelectronic devices depends on a better understanding of st rain-induced structural defects that lead to the deterioration of the mater ials' electronic properties. We have previously reported the successful gro wth of strain compensated InP/GaAs/GaP/GaAs structures by chemical beam epi taxy. In this paper, we use similar structures grown on off-cut (001) GaAs substrates to investigate the dynamics of structural defects creation and p ropagation. our results from high resolution X-ray diffraction (HRXRD), con ventional and high resolution transmission electron microscopy (TEM and HRT EM) as well as cathodoluminescence (CL) techniques from samples grown on 2, 4, 6, 10, 12 and 14 degrees (111)A misoriented GaAs (001) substrates are p resented. The effect of post-growth thermal treatment on these strain balan ced superlattices are also discussed. (C) 2000 Published by Elsevier Scienc e Ltd. All rights reserved.