Modelling of submicronic MOSFET's ageing effects using spice

In this work we develop a submicronic transistor model (narrow and short ch annel) to study MOSFET's ageing using the charge pumping technique. In this model, implemented in SPICE3F4, a majority of physical effects have been i ncorporated for the different functioning regions. They concern the reducti on mobility effect, the carriers velocity saturation, the channel length mo dulation, the short channel effect, the threshold voltage variation with th e reverse bias voltage (V-rev), and the distribution of the interface state s. The results obtained are compared to other theoretical and experimental results. (C) 2000 Elsevier Science Ltd. All rights reserved.