1.55 mu m spot-size converter integrated-laser diode fabricated by selective-area metalorganic vapor-phase epitaxy

A 1.55 mu m spot-size converter integrated-laser diode (SSC-LD) with a vert ically tapered-thickness waveguide was fabricated by using selective-area m etalorganic vapor-phase epitaxy (MOVPE). A tapered-thickness profile and PL wavelength shift as large as 238 nm in the waveguide were obtained by usin g an exponentially tapered shape mask. The SSC-LD exhibited a high slope ef ficiency of 0.31 W/A and a beam divergence of 6.9 degrees x 12.4 degrees wi thout facet coating. The coupling loss between the LD and SMF was measured to be 2.76 dB, and the 1 dB alignment tolerances were +/- 2/4 mu m for the horizontal direction, +/- 2.0 mu m for the vertical direction, and 13 mu m for the longitudinal direction. (C) 2000 John Wiley & Sons, Inc.