Citation
Vv. Tretyakov et al., Investigation of inhomogeneites in epitaxial AlxGa1-xN layers grown on sapphire, MIKROCH ACT, 132(2-4), 2000, pp. 361-364
Citations number
8
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
MIKROCHIMICA ACTA
ISSN journal
00263672
→ ACNP
Volume
132
Issue
2-4
Year of publication
2000
Pages
361 - 364
Database
ISI
SICI code
0026-3672(2000)132:2-4<361:IOIIEA>2.0.ZU;2-V
Abstract
Procedures for the preparation of bevels and the determination of their geo
metrical parameters have been developed. Using these procedures study of co
mpositional and optical spatially resolved inhomogeneities of AlxGa1-xN lay
ers grown on (0001) sapphire have been studied by EPMA and cathodoluminesce
nce. It has been found that the nonuniform distribution in depth of Al in e
pitaxial layers grown under constant conditions is connected with presence
of stresses in the layer.