Robust GeAu thin film bolometers for nuclear radiation detection have
been fabricated on Silicon substrates, using flash evaporation and mic
rofabrication techniques. Electrical (rho(T)) and thermal characterist
ics (heat capacity, conductance to substrate) of the devices were meas
ured over a wide range of composition (10 to 45 wt-% Au) and temperatu
re (0.27 - 77 K). Variable range hopping explains the temperature depe
ndence of resistivity, with no indication of an abrupt transition to i
nsulating or metallic behavior at the lowest temperatures tested. Heat
pulses due to alpha particles incident on either side of the devices
have been observed at 1.5 K.