Low temperature NbSi thin film thermometers on Silicon Nitride membranes for bolometer applications

Authors
Camus, P Berge, L Dumoulin, L Marnieros, S Torre, JP
Citation
P. Camus et al., Low temperature NbSi thin film thermometers on Silicon Nitride membranes for bolometer applications, NUCL INST A, 444(1-2), 2000, pp. 419-422
Citations number
5
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
444
Issue
1-2
Year of publication
2000
Pages
419 - 422
Database
ISI
SICI code
0168-9002(20000411)444:1-2<419:LTNTFT>2.0.ZU;2-P
Abstract
We report the design of amorphous NbSi thin film bolometer thermometers on Silicon Nitride membranes. Due to the low-thermal conductivity of Si3N4, th is material has several applications in millimeter wavelength bolometers an d microcalorimetry. Compared to NTD-Ge thermometers, similar sensitivities are obtained with a 50 times lesser volume. The smallest realized films hav e a rectangular surface (100 x 400 mu m(2)) and are 100 nm thick. Optimizat ion of the thermometer shape, NbSi composition and electrical material cont act is discussed. The goal of this development is to manufacture a complete array of bolometers by photolithography techniques. (C) 2000 Elsevier Scie nce B.V. All rights reserved.