Chemical doping of individual semiconducting carbon-nanotube ropes

Citation
M. Bockrath et al., Chemical doping of individual semiconducting carbon-nanotube ropes, PHYS REV B, 61(16), 2000, pp. 10606-10608
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
16
Year of publication
2000
Pages
10606 - 10608
Database
ISI
SICI code
1098-0121(20000415)61:16<10606:CDOISC>2.0.ZU;2-#
Abstract
We report the effects of potassium doping on the conductance of individual semiconducting single-walled carbon nanotube ropes. We are able to control the level of doping by reversibly intercalating and de-intercalating potass ium. Potassium doping changes the carriers in the ropes from holes to elect rons. Typical values for the carrier density are found to be similar to 100 -1000 electrons/mu m. The effective mobility for the electrons is mu(eff)si milar to 20-60 cm(2) V-1 s(-1), a value similar to that reported for the ho le effective mobility in nanotubes [R. Martel et al., Appl. Phys. Lett. 73, 2447 (1998)].