Electronic structure of zinc-blende MnTe investigated by photoemission andinverse-photoemission spectroscopies

Valence-band and conduction-band electronic structure of zinc-blende MnTe ( 111) epitaxial film has been investigated by ultraviolet photoemission and inverse-photoemission spectroscopies (UPS and IPES). The UPS and IPES spect ra exhibit peak structures at -1.5, -3.4, and -4.3 eV, and at 3.5 and 6.7 e V relative to the valence-band maximum, respectively. Based on a one-electr on band-structure calculation, peaks at -3.4 and 3.5 eV are assigned to emi ssions from the occupied Mn 3d up arrow and unoccupied Mn 3d down arrow sta tes with nearly localized character. From their energy positions, a Mn 3d e xchange splitting energy is estimated to be 6.9+/-0.2 eV, which is close to that of Cd1-xMnTe (7.0+/-0.2 eV) and is slightly larger than that of NiAs- type MnTe (6.6+/-0.2 eV).