Nucleation and growth of supported clusters at defect sites: Pd/MgO(001)

Citation
G. Haas et al., Nucleation and growth of supported clusters at defect sites: Pd/MgO(001), PHYS REV B, 61(16), 2000, pp. 11105-11108
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
16
Year of publication
2000
Pages
11105 - 11108
Database
ISI
SICI code
1098-0121(20000415)61:16<11105:NAGOSC>2.0.ZU;2-R
Abstract
Nucleation and growth of Pd on cleaved MgO(001) surfaces were studied by va riable-temperature atomic force microscopy in the temperature range 200-800 K. Constant island densities (similar to 3x10(12)cm(-2)) were observed ove r a wide temperature range, indicating nucleation kinetics governed by poin t defects with a high trapping energy. These results are compared to a rate equation model that describes the principal atomistic nucleation and growt h processes, including nucleation at attractive point defects. Energies for defect trapping, adsorption, surface diffusion, and pair binding are deduc ed, and compared with recent nb initio calculations.