It is known that surface steps can give rise to diffusion barriers and gene
rate moundlike rough surfaces during thin-him growth. We study the influenc
e of moundlike rough surfaces on electron scattering and electrical conduct
ivity of semiconducting and metallic thin films. For a semiconducting film,
the intraminiband cutoff q(c) limits the contribution from mound surface s
cattering. Three different cases are illustrated to show how surface morpho
logy affects the conductivity: q(0)<q(c), q(0)=q(c), and q(0)>q(c). Here go
is the ring position of the surface power spectrum. For a metallic film wi
th a single rough boundary, quantum size effect (QSE) oscillations are shif
ted in phase and weakened by the presence of wavelength selection in surfac
e morphology. In this case, the conductivity reaches a minimum at a certain
value of the system correlation length zeta when the mound separation lamb
da obeys the condition lambda>lambda(F) or lambda<lambda(F) (lambda(F) bein
g the Fermi wavelength). The presence of cross correlation in films with tw
o rough boundaries greatly influences the initial stage of QSE oscillation
of metallic films. Finally, we show that the size and shape of quantum effe
cts depend very much on the different growth modes. The power-law behavior
of the conductivity versus film thickness can be dramatically altered durin
g dynamic growth, which provides a reasonable explanation for recent experi
ments.