Second harmonic generation in hydrogenated amorphous silicon

Authors
Alexandrova, S Danesh, P Maslyanitsyn, IA
Citation
S. Alexandrova et al., Second harmonic generation in hydrogenated amorphous silicon, PHYS REV B, 61(16), 2000, pp. 11136-11138
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
16
Year of publication
2000
Pages
11136 - 11138
Database
ISI
SICI code
1098-0121(20000415)61:16<11136:SHGIHA>2.0.ZU;2-Q
Abstract
The first application of the second harmonic generation (SHG) technique to investigate the structure of a-Si:H films is reported. Dependence of SHG on the type of substrate material and the temperature during deposition has b een observed. The origin of SHG is discussed. A stress model is proposed to explain the experimental results. It is suggested that the second harmonic is generated in a strained layer close to the substrate.