Influence of the impurity potential on the phase separation in doped antiferromagnetic semiconductors

Authors
Citation
El. Nagaev, Influence of the impurity potential on the phase separation in doped antiferromagnetic semiconductors, PHYS LETT A, 267(5-6), 2000, pp. 448-455
Citations number
7
Categorie Soggetti
Physics
Journal title
PHYSICS LETTERS A
ISSN journal
03759601 → ACNP
Volume
267
Issue
5-6
Year of publication
2000
Pages
448 - 455
Database
ISI
SICI code
0375-9601(20000327)267:5-6<448:IOTIPO>2.0.ZU;2-R
Abstract
At moderate charge carrier densities the crystal considered in the jellium model may So over into the phase-separated state with the insulating antife rromagnetic phase and highly-conductive ferromagnetic state. If one takes i nto account the real electrostatic potential of ionized donors (acceptors), the phase-separated state competes with the Mott insulating state. In the case of the single-electron donors, the phase separated state is unlikely t o exist. But it certainly can exist in the case of the double-electron dono rs. (C) 2000 Published by Elsevier Science B.V. All rights reserved.