Interaction of thin silicon layers with the (0001) surface of rare-earth metals

The electronic and crystalline structures of the systems formed upon deposi tion of silicon layers onto the Gd(0001) and Dy(0001) surfaces of single-cr ystal films annealed subsequently at T = 450-500 degrees C have been studie d by low-energy electron diffraction (LEED) and also by the Auger electron and angle-resolved photoelectron spectroscopy of the valence band and the S i(2p) core level. It is shown that the systems thus produced can be describ ed as starting single-crystal films of Gd and Dy, with 3D islands of the si licides of these metals on the surface of the corresponding metal films. (C ) 2000 MAIK "Nauka/Interperiodica".