Pb deposition on n-Si(111): H electrodes: an in situ X-ray study

Authors
Ziegler, JC Scherb, G Bunk, O Kazimirov, A Cao, LX Kolb, DM Johnson, RL Zegenhagen, J
Citation
Jc. Ziegler et al., Pb deposition on n-Si(111): H electrodes: an in situ X-ray study, SURF SCI, 452(1-3), 2000, pp. 150-160
Citations number
21
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
452
Issue
1-3
Year of publication
2000
Pages
150 - 160
Database
ISI
SICI code
0039-6028(20000501)452:1-3<150:PDONHE>2.0.ZU;2-A
Abstract
Growth mode and epitaxial properties of electrochemically deposited pb on h ydrogen-terminated n-Si(111) were studied by using in situ X-ray Standing w aves and surface X-ray diffraction. Pb shows a Volmer-Weber growth mode and the Pb crystallites grow predominantly epitaxially, with the(111)planes pa rallel to the Si(lll) planes and with a preferred in-plane orientation. (C) 2000 Elsevier Science B.V. All rights reserved.