DEVICE-STRUCTURE DEPENDENCE OF SHIFT IN SQUID CHARACTERISTICS BY FLUXTRAPPING

Citation
T. Nishino et al., DEVICE-STRUCTURE DEPENDENCE OF SHIFT IN SQUID CHARACTERISTICS BY FLUXTRAPPING, Physica. B, Condensed matter, 194, 1994, pp. 113-114
Citations number
2
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
1
Pages
113 - 114
Database
ISI
SICI code
0921-4526(1994)194:<113:DDOSIS>2.0.ZU;2-U
Abstract
Shifts in voltage-flux characteristics of a SQUID by flux trapping hav e been measured to study effectiveness of guard ring structure on shie lding of magnetic field. The measurements are made under controlled ma gnetic field. Magnitude of the shift depends on the device structure. It is found that there exists a threshold field for the flux trapping, and the field is reduced by introducing the guard-ring in the SQUID. Comparing to the SQUID without the structure, the SQUID with it needs higher-grade shielding to prevent the flux trapping during cooling dow n.